Origin of metal-insulator transition temperature enhancement in underdoped lanthanum manganite films

Applied Physics Letters

Volumn 82, Issue 12, 2003, Pages 1908-1910

  Murugavel, P ^a   Lee, J H ^a   Yoon, Jong Gul ^a,d   Noh, T W ^a   Chung, J S ^b   Heu, M ^c   Yoon, S ^c  

^a Seoul National University   (South Korea)

^b Soongsil University   (South Korea)

^c The Catholic University of Korea   (South Korea)

^d Suwon University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; COLOSSAL MAGNETORESISTANCE; DOPING (ADDITIVES); ELECTRON TRANSPORT PROPERTIES; LANTHANUM COMPOUNDS; MANGANESE COMPOUNDS; METAL INSULATOR TRANSITION; POSITIVE IONS; STRAIN; X RAY DIFFRACTION ANALYSIS;

LATTICE MISMATCH;

THIN FILMS;

EID: 0037464202     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1563740     Document Type: Article

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