Effects of intrinsic ZnO buffer layer based on P3HT/PCBM organic solar cells with Al-doped ZnO electrode

Solar Energy Materials and Solar Cells

Volumn 93, Issue 6-7, 2009, Pages 1020-1023

  Park, Sungeun ^a   Tark, Sung Ju ^a   Lee, Joon Sung ^a   Lim, Heejin ^a   Kim, Donghwan ^a  

^a Korea University   (South Korea)

Author keywords

Intrinsic ZnO; Organic solar cells; Shunt resistance; ZnO

Indexed keywords

AL-DOPED ZNO; BUTYRIC ACIDS; ELECTRICAL CONDUCTIONS; ELECTRON DONORS; INDIUM TIN OXIDES; INTRINSIC ZNO; MATERIAL COSTS; METHYL ESTERS; OPTICAL TRANSMITTANCES; ORGANIC SOLAR CELLS; POLY-3-HEXYLTHIOPHENE; SHUNT RESISTANCE; TRANSPARENT ELECTRODES; ZNO; ZNO BUFFER LAYERS; ZNO LAYERS;

ALUMINUM; CELL MEMBRANES; ESTERS; FATTY ACIDS; PHOTOVOLTAIC CELLS; SEMICONDUCTING ZINC COMPOUNDS; TIN; TITANIUM COMPOUNDS; ZINC OXIDE;

SOLAR CELLS;

EID: 67349216767     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2008.11.033     Document Type: Article

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