SCOPUS 정보 검색 플랫폼

Volumn 109, Issue 12, 2011, Pages

Mechanisms of edge-dislocation formation in strained films of zinc blende and diamond cubic semiconductors epitaxially grown on (001)-oriented substrates

(4) Bolkhovityanov, Yu B a Deryabin, A S a Gutakovskii, A K a Sokolov, L V a

a INSTITUTE OF SEMICONDUCTOR PHYSICS (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

DIAMOND CUBIC SEMICONDUCTORS; ELASTIC STRAIN; EPITAXIALLY GROWN; FILM-SUBSTRATE INTERFACES; FORMATION MECHANISM; GAAS SUBSTRATES; INDUCED NUCLEATION; LATTICE MISFITS; PLASTIC RELAXATION; RELAXED BUFFER LAYERS; STRAINED FILMS; THREADING DISLOCATION; ZINC BLENDE;

GALLIUM ALLOYS; SUBSTRATES;

EDGE DISLOCATIONS;

EID: 79960157236 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3597903 Document Type: Article

Times cited : (25)

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