Growth and annealing of zinc-blende CdSe thin films on GaAs (0 0 1) by molecular beam epitaxy

Applied Surface Science

Volumn 257, Issue 21, 2011, Pages 9038-9043

  Yang, Qiumin ^a   Zhao, Jie ^a   Guan, Min ^a   Liu, Chao ^a   Cui, Lijie ^a   Han, Dejun ^b   Zeng, Yiping ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

^b Beijing Normal University ^*  (China)

Author keywords

Atomic force microscopy; CdSe; Molecular beam epitaxy; Reflection high energy electron diffraction; X ray diffraction

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; CADMIUM COMPOUNDS; EPILAYERS; GALLIUM ARSENIDE; II-VI SEMICONDUCTORS; III-V SEMICONDUCTORS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING GALLIUM; SUBSTRATES; THERMODYNAMIC STABILITY; THIN FILMS; X RAY DIFFRACTION; ZINC; ZINC SULFIDE;

ANNEALING TEMPERATURES; CDSE; POLYCRYSTALLINE STRUCTURE; ROOT MEAN SQUARE ROUGHNESS; STRUCTURAL QUALITIES; SUBSTRATE TEMPERATURE; TEMPERATURE INCREASE; ZINC-BLENDE STRUCTURES;

SELENIUM COMPOUNDS;

EID: 79960153112     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2011.05.096     Document Type: Article

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