Structural characterization of integrated II-VI and III-V heterostructures for solar cell applications

Journal of Electronic Materials

Volumn 38, Issue 8, 2009, Pages 1558-1562

  Zhang, X ^a   Wang, S ^b   Ding, D ^b   Liu, X ^c   Tan, J H ^b   Furdyna, J K ^c   Zhang, Y H ^b   Smith, D J ^a  

^a ARIZONA STATE UNIVERSITY   (United States)

^b Arizona State University   (United States)

^c UNIVERSITY OF NOTRE DAME   (United States)

Author keywords

Molecular beam epitaxy; Multijunction solar cell; Short period superlattice; Transmission electron microscopy

Indexed keywords

CDTE; DIGITAL ALLOYS; ELECTRON MICROGRAPH; HETEROSTRUCTURES; HIGH QUALITY; HIGH RESOLUTION; HIGH-QUALITY INTERFACE; INAS; LATTICE-MATCHED; MICRO-STRUCTURAL CHARACTERIZATION; MICROTWINS; MONOLITHICALLY INTEGRATED; MULTIJUNCTION SOLAR CELL; SHORT-PERIOD SUPERLATTICE; SHORT-PERIOD SUPERLATTICES; SOLAR-CELL APPLICATIONS; STRUCTURAL CHARACTERIZATION; STRUCTURAL DEFECT; TOP SURFACE;

BUFFER LAYERS; CADMIUM ALLOYS; CADMIUM COMPOUNDS; CELL MEMBRANES; CRYSTAL GROWTH; ELECTRON MICROSCOPES; ELECTRONS; EPITAXIAL LAYERS; GALLIUM ALLOYS; INDIUM ARSENIDE; LATTICE MISMATCH; LIGHT TRANSMISSION; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MOLECULAR DYNAMICS; MONOLITHIC INTEGRATED CIRCUITS; OPTICAL WAVEGUIDES; PHOTOVOLTAIC CELLS; RAPID THERMAL ANNEALING; RAPID THERMAL PROCESSING; SEMICONDUCTING CADMIUM COMPOUNDS; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR QUANTUM WIRES; SOLAR CELLS; STACKING FAULTS; SUPERLATTICES; TRANSMISSION ELECTRON MICROSCOPY;

SUBSTRATES;

EID: 68749083359     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-009-0746-y     Document Type: Conference Paper

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