Composition control of CdSeTe layers grown by molecular beam epitaxy

Journal of Crystal Growth

Volumn 237-239, Issue 1-4 II, 2002, Pages 1550-1553

  Matsumura, Nobuo ^a   Sakamoto, Takuya ^a   Saraie, Junji ^a  

^a KYOTO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

A3. Molecular beam epitxy; B1. Cadmium compounds; B2. Semiconducting cadmium compounds

Indexed keywords

CRYSTALS; DESORPTION; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SURFACE REACTIONS; VAPOR PRESSURE;

HEAT OF FORMATIONS; PHYSISORBED ATOMS;

SEMICONDUCTING CADMIUM COMPOUNDS;

EID: 18344411250     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)02366-1     Document Type: Article

References (8)