Optical properties of Zn1-xCdxSe epilayers grown on (100) GaAs by molecular beam epitaxy

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 8 A, 2004, Pages 5145-5150

  Kuo, Ming Chin ^a   Chiu, Kuan Cheng ^a   Shih, Tsai Hsuai ^a   Lai, Yi Jen ^a   Yang, Chu Shou ^b   Chen, Wei Kuo ^b   Chuu, Der San ^b   Lee, Ming Chih ^b   Chou, Wu Ching ^b   Jeng, Syang Ywan ^a   Shih, Yu Tai ^d   Lan, Wen Ho ^a,b,c,d  

^a CHUNG YUAN CHRISTIAN UNIVERSITY   (Taiwan)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^c NATIONAL CHANGHUA UNIVERSITY OF EDUCATION   (Taiwan)

^d NATIONAL UNIVERSITY OF KAOHSIUNG   (Taiwan)

Author keywords

Activation energy; Molecular beam epitaxy; Photoluminescence; ZnCdSe epilayer

Indexed keywords

ACTIVATION ENERGY; ENERGY DISPERSIVE SPECTROSCOPY; LATTICE CONSTANTS; LINEARIZATION; MOLECULAR BEAM EPITAXY; PARAMETER ESTIMATION; PHONONS; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; STRAIN CONTROL; X RAY DIFFRACTION;

LATTICE MISMATCH; REFLECTED HIGH-ENERGY ELECTRON DIFFRACTION (RHEED); X-RAY ROCKING; ZNCDSE EPILAYER;

ZINC COMPOUNDS;

EID: 6344282783     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.5145     Document Type: Article

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