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Applied Physics Letters

Volumn 98, Issue 26, 2011, Pages

Improved tunneling magnetoresistance in (Ga,Mn)As/AlOx/CoFeB magnetic tunnel junctions

(6) Yu, G Q a,b Chen, L c Rizwan, Syed a Zhao, J H c Xu, K b Han, X F a

a INSTITUTE OF PHYSICS (China)

b SUZHOU INSTITUTE OF NANO TECH AND NANO BIONICS (China)

c INSTITUTE OF SEMICONDUCTORS (China)

Author keywords

[No Author keywords available]

Indexed keywords

FERROMAGNETIC SEMICONDUCTOR; LOW TEMPERATURE ANNEALING; MAGNETIC TUNNEL JUNCTION; PLASMA CLEANING; POST-PLASMA; PREANNEALING; TUNNELING MAGNETORESISTANCE;

CLEANING; COBALT COMPOUNDS; ELECTRIC RESISTANCE; FILM GROWTH; MAGNETIC DEVICES; MAGNETISM; MAGNETOELECTRONICS; MAGNETOPLASMA; MAGNETORESISTANCE; MANGANESE;

TUNNEL JUNCTIONS;

EID: 79960107678 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3603946 Document Type: Article

Times cited : (10)

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