The microstructure, resistivity and infrared emissivity of ITO film with O/Ar ratio variation in Al2O3 buffer layer

Materials Science Forum

Volumn 687, Issue , 2011, Pages 771-777

  Chao, Yipeng ^a   Tang, Wu ^a   Weng, Xiaolong ^a   Deng, Longjiang ^a  

^a UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA   (China)

Author keywords

Emissivity; ITO films; Resistivity

Indexed keywords

ALUMINA; ALUMINUM OXIDE; ARGON; ELECTRIC CONDUCTIVITY; ELECTROMAGNETIC WAVE EMISSION; FOURIER TRANSFORM INFRARED SPECTROSCOPY; INTERFACE STATES; MICROSTRUCTURE; MORPHOLOGY; OXYGEN; SURFACE MORPHOLOGY; SURFACE ROUGHNESS;

EMISSIVITY; FOUR POINT PROBE; INFRARED EMISSIVITY; ITO FILMS; PET SUBSTRATE; UV-VIS SPECTROPHOTOMETERS; VISIBLE LIGHT;

BUFFER LAYERS;

EID: 79959990162     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.687.771     Document Type: Conference Paper

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