Atomic layer deposition of BaTiO3 thin films - Effect of barium hydroxide formation

Chemical Vapor Deposition

Volumn 13, Issue 5, 2007, Pages 239-246

  Vehkamäki, Marko ^a   Hatanpää, Timo ^a   Ritala, Mikko ^a   Leskelä, Markku ^a   Väyrynen, Samuli ^a   Rauhala, Eero ^a  

^a UNIVERSITY OF HELSINKI   (Finland)

Author keywords

ALD; Barium cyclopentadienyl; Barium hydroxide; Barium oxide; Barium titanate

Indexed keywords

ANNEALING; ATOMIC LAYER DEPOSITION; ATOMIC PHYSICS; ATOMS; BARIUM; BARIUM TITANATE; CHARGE DENSITY; DEPOSITION; LEAKAGE CURRENTS; OXYGEN; PHYSICAL VAPOR DEPOSITION; PLATINUM; PULSED LASER DEPOSITION; THICK FILMS; THIN FILMS; TITANIUM;

ALD; AMORPHOUS; ANNEALED FILMS; ATOMIC LAYER DEPOSITION (ALD; ATOMIC LAYERS; BARIUM HYDROXIDE; BARIUM HYDROXIDES; BARIUM OXIDE; BARIUM TITANATE THIN FILMS; BINARY REACTIONS; EQUIVALENT OXIDE THICKNESSES; GROWTH CYCLES; OXYGEN SOURCES; PROCESS TEMPERATURES; PT ELECTRODES;

AMORPHOUS FILMS;

EID: 54949142183     PISSN: 09481907     EISSN: 15213862     Source Type: Journal    
DOI: 10.1002/cvde.200606538     Document Type: Article

References (30)

1. G. D. Wilk, R. M. Wallace, J. M. Anthony, J. Appl. Phys. 2001, 89, 5243.
2. H. Schroeder, A. Kingon, Nanoelectronics and Information Technology [Ed: R. Waser], Wiley-VCH, Weinheim 2003, pp. 539-563.
3. H. Hu, C. Zhu, X. Yu, A. Chin, M. F. Li, B. J. Cho, D.-L. Kwong, P. D. Foo, M. B. Yu, X. Lin, J. Winkler, IEEE Electron Dev. Lett. 2003, 24, 60.
4. M. Ritala, M. Leskelä, in Handbook of Thin Film Materials, Vol. 1 [Ed: H. S. Nalwa], Academic Press, San Diego, CA 2002, pp. 103-125.
5. T. Suntola, Thin Solid Films 1992, 276, 84.
6. C. Pithan, D. Hennings, R. Waser, Int. J. Appl. Ceram. Technol. 2005, 2, 1.
7. B. Heinen, R. Waser, J. Mater. Sci. 1998, 33, 4603.
8. T. B. Wu, C. M. Wu, M. L. Chen, Appl. Phys. Lett. 1996, 69, 2659.
9. A. R. West, T. B. Adams, F. D. Morrison, D. C. Sinclair, J. Eur. Ceram. Soc. 2004, 24, 1439.
10. M. Nayak, S. Ezhilvalavan, T. Y. Tseng, in Handbook of Thin Film Materials, Vol. 3 [Ed: H. S. Nalwa], Academic Press, San Diego, CA 2002, pp. 99-167.
11. M. Ritala, M. Leskelä, E. Nykänen, E. Soininen, L. Niinistö, Thin Solid Films 1994, 6, 556.
12. M. Vehkamäki, M. Hatanpää, M. Ritala, M. Leskelä, unpublished.
13. M. Schuisky, A. Hårsta, A. Aidla, K. Kukli, A.-A. Kiisler, J. Aarik, J. Electrochem. Soc. 2000, 147, 3319.
14. M. Ritala, M. Leskelä, Chem. Mater. 1993, 5, 1174.
15. M. Ritala, M. Leskelä, Chem. Mater. 1994, 6, 556.
16. V. Pore, A. Rahtu, M. Leskelä, M. Ritala, T. Sajavaara, J. Keinonen, Chem. Vap. Deposition 2004, 10, 143.
17. T. Hatanpää, M. Vehkamäki, I. Mutikainen, J. Kansikas, M. Ritala, M. Leskelä, Dalton Trans. 2004, 1181.
18. A. Kosola, M. Putkonen, L.-S. Johansson, L. Niinistö, Appl. Surf. Sci. 2003, 211, 102.
19. H. S. Booth, L. H. McIntyre, Ind. Eng. Chem., Anal. Ed. 1930, 2, 12.
20. F. Trusell, H. Diehl, Anal. Chem. 1963, 6, 674.
21. M. Ali, R. Mishra, A. S. Kerkar, S. R. Bharadwaj. D. Das, J. Nucl. Mater. 2001, 289, 243.
22. P. de Rouffignac, J.-S. Park, R. G. Gordon, Chem. Mater. 2005, 17, 4808.
23. M. Vehkamäki, T. Hänninen, M. Ritala, M. Leskelä, T. Sajavaara, E. Rauhala, J. Keinonen, Chem. Vap. Deposition 2001, 7, 75.
24. M. Wöhlecke, V. Marrello, A. Onton, J. Appl. Phys. 1977, 48, 17481.
25. Y. S. Kim, J. Y. Jo, D. J. Kim, Y. J. Chang, J. H. Lee, T. W. Noh, T. K. Song, J.-G. Yoon, J.-S. Chung, S. I. Baik, Y.-W. Kim, C. U. Jung, Appl. Phys. Lett. 2006, 58, 072909.
26. J. W. Jang, S. J. Chung, W. J. Cho, T. S. Hahn, S. S. Choi, J. Appl. Phys. 1997, 81, 6323.
27. P. Mazoyer, S. Blonkowski, F. Mondom, A. Farcy, J. Torres, O. Reimbold, F. Martin, J.-F. Damlencourt, Y. Morand, N. Bicais, S. Descombes, IITC Techn. Dig. 2003, 117.
28. M. Ylilammi, T. Ranta-aho, Thin Solid Films 1993, 252, 56.
29. J. Saarilahti, E. Rauhala, Nucl. Instrum. Methods Phys. Res. 1992, B64, 734.
30. R. A. Waldo, Microbeam Anal. 1988, 310.