Side-wall roughness of deep trenches in 1D and 2D periodic silicon structures fabricated by photoelectrochemical etching

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 8, Issue 6, 2011, Pages 1936-1940

  Astrova, E V ^a   Fedulova, G V ^a   Zharova, Yu A ^a   Gushchina, E V ^a  

^a IOFFE INSTITUTE   (Russian Federation)

Author keywords

Atomic force microscopy; Electrochemical etching; Periodic structure; Photonic crystals; Silicon

Indexed keywords

2D ARRAYS; DEEP TRENCH; GEOMETRIC PARAMETER; KOH SOLUTION; MACROPORES; PERIODIC ARRAYS; PHOTO-ELECTROCHEMICAL ETCHING; PORE FORMATION; SIDE WALLS; SILICON STRUCTURES; THERMAL OXIDATION; VERTICAL WALL;

CRYSTAL ATOMIC STRUCTURE; ELECTROCHEMISTRY; PERIODIC STRUCTURES; PHOTONIC CRYSTALS;

ELECTROCHEMICAL ETCHING;

EID: 79959677907     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.201000138     Document Type: Article

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