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Volumn 133, Issue 2, 2008, Pages 613-616

New gas sensitive MIS structures Pt/Al2O3(M = Pt, Rh)/Si with a granular dielectric layer

Author keywords

Gas sensor; MIS structure; Sensitivity enhancement; Surface states

Indexed keywords

SWITCHING CIRCUITS;

EID: 47849100074     PISSN: 09254005     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.snb.2008.03.027     Document Type: Article
Times cited : (8)

References (14)
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  • 5
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    • Chemical reactions on palladium surfaces studied with Pd-MOS structures
    • Lundstrom I., Shivaraman M.S., and Svensson C.M. Chemical reactions on palladium surfaces studied with Pd-MOS structures. Surf. Sci. 64 (1977) 497-519
    • (1977) Surf. Sci. , vol.64 , pp. 497-519
    • Lundstrom, I.1    Shivaraman, M.S.2    Svensson, C.M.3
  • 7
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    • The effect of hydrogen and carbon monoxide on the interface state density in MOS gas sensors with ultra thin palladium gates
    • Formoso M.A., and Maclay G.J. The effect of hydrogen and carbon monoxide on the interface state density in MOS gas sensors with ultra thin palladium gates. Sens. Actuators B 2 (1990) 11-12
    • (1990) Sens. Actuators B , vol.2 , pp. 11-12
    • Formoso, M.A.1    Maclay, G.J.2
  • 8
    • 0020090667 scopus 로고
    • 2-induced interfacial trapping states
    • 2-induced interfacial trapping states. J. Appl. Phys. 53 (1982) 1091-1099
    • (1982) J. Appl. Phys. , vol.53 , pp. 1091-1099
    • Keramati, B.1    Zemel, J.N.2
  • 10
    • 0032117864 scopus 로고    scopus 로고
    • The effect of hydrogen-induced interface traps on a titanium dioxide-based palladium gate MOS capacitor (Pd-MOSC): a conductance study
    • Dwivedi D., Dwivedi R., and Srivastava S.K. The effect of hydrogen-induced interface traps on a titanium dioxide-based palladium gate MOS capacitor (Pd-MOSC): a conductance study. Microelectron. J. 29 (1998) 445-450
    • (1998) Microelectron. J. , vol.29 , pp. 445-450
    • Dwivedi, D.1    Dwivedi, R.2    Srivastava, S.K.3
  • 11
    • 22944439732 scopus 로고    scopus 로고
    • 3(M = Pt, Ru) catalytic membranes for selective semiconductor gas sensors
    • 3(M = Pt, Ru) catalytic membranes for selective semiconductor gas sensors. Sens. Actuators B 109 (2005) 91-96
    • (2005) Sens. Actuators B , vol.109 , pp. 91-96
    • Ryzhikov, A.1    Labeau, M.2    Gaskov, A.3
  • 13
    • 47849102310 scopus 로고    scopus 로고
    • V.S. Fomenko, Emission Properties of Materials, Naukova Dumka, Kiev, 1981, p. 339.
    • V.S. Fomenko, Emission Properties of Materials, Naukova Dumka, Kiev, 1981, p. 339.
  • 14
    • 0030233440 scopus 로고    scopus 로고
    • Approaches and mechanisms of solid state sensing
    • Lundstrom I. Approaches and mechanisms of solid state sensing. Sens. Actuators B 35-36 (1996) 11-19
    • (1996) Sens. Actuators B , vol.35-36 , pp. 11-19
    • Lundstrom, I.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.