Structural properties of porous 6H silicon carbide

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 8, Issue 6, 2011, Pages 1950-1953

  Newby, Pascal ^a,b   Bluet, Jean Marie ^a   Aimez, Vincent ^b   Fréchette, Luc G ^b   Lysenko, Vladimir ^a  

^a UNIVERSITÉ DE LYON   (France)

^b UNIVERSITÉ DE SHERBROOKE   (Canada)

Author keywords

Anodisation; Morphology; Porous; Raman; Silicon carbide

Indexed keywords

CRYSTAL SYMMETRY; CURRENT DENSITY; MORPHOLOGY; SILICON CARBIDE;

6H-SILICON CARBIDES; ANODISATION; LONGITUDINAL OPTICAL; NANOSCALE MORPHOLOGY; PORE NUCLEATION; POROUS; RAMAN; UV ILLUMINATIONS;

POROUS SILICON;

EID: 79959628375     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.201000222     Document Type: Article

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