메뉴 건너뛰기




Volumn 47, Issue 9, 2005, Pages 1630-1636

On the role of vacancies in pore formation in the course of anodizing of silicon carbide

Author keywords

[No Author keywords available]

Indexed keywords


EID: 25144463531     PISSN: 10637834     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.2045345     Document Type: Article
Times cited : (10)

References (28)
  • 28
    • 0003475786 scopus 로고
    • North-Holland, Amsterdam Mir, Moscow
    • K. Sangval, Etching of Crystals (North-Holland, Amsterdam, 1987; Mir, Moscow, 1990).
    • (1987) Etching of Crystals
    • Sangval, K.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.