Vertical silicon p-n-p-n tunnel nMOSFET with MBE-grown tunneling junction

IEEE Transactions on Electron Devices

Volumn 58, Issue 7, 2011, Pages 1907-1913

  Tura, Ahmet ^a   Zhang, Zhenning ^b   Liu, Peichi ^b   Xie, Ya Hong ^b   Woo, Jason C S ^b  

^a INTEL CORPORATION   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

p i n tunnel field effect transistor (TFET); p n p n tunnel field effect transistor (TFET)

Indexed keywords

AS-GROWN; CHANNEL PROFILE; DOPANT PROFILE; LOW-THERMAL-BUDGET; MOLECULAR BEAM EPITAXIAL GROWTH; NMOSFET; P-N-P-N TUNNEL FIELD-EFFECT TRANSISTOR (TFET); PROCESS FLOWS; SUBTHRESHOLD SWING; TUNNELING JUNCTIONS; TUNNELING VOLTAGES;

EPITAXIAL GROWTH; TRANSISTORS;

FIELD EFFECT TRANSISTORS;

EID: 79959517345     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2011.2148118     Document Type: Article

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