Effect of patterned sapphire substrate shape on light output power of GaN-based LEDs

IEEE Photonics Technology Letters

Volumn 23, Issue 14, 2011, Pages 944-946

  Huang, Xiao Hui ^a,b   Liu, Jian Ping ^a   Fan, Ya Ying ^a   Kong, Jun Jie ^a   Yang, Hui ^a   Wang, Huai Bing ^a  

^a SUZHOU INSTITUTE OF NANO TECH AND NANO BIONICS   (China)

^b UNIVERSITY OF CHINESE ACADEMY OF SCIENCES   (China)

Author keywords

GaN; illumination intensity; light emitting diode (LED); patterned sapphire substrate (PSS)

Indexed keywords

FILL FACTOR; GAN; GAN BASED LED; ILLUMINATION INTENSITY; LIGHT ILLUMINATION; LIGHT OUTPUT POWER; MICRO-PYRAMID ARRAYS; OPTICAL SIMULATION; OUTPUT POWER; PATTERNED SAPPHIRE SUBSTRATE;

EPITAXIAL GROWTH; GALLIUM ALLOYS; LIGHT EMISSION; LIGHT REFLECTION; ORGANIC LIGHT EMITTING DIODES (OLED); SAPPHIRE; SUBSTRATES;

GALLIUM NITRIDE;

EID: 79959507982     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2011.2142397     Document Type: Article

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