Critical dimension measurement of an extreme-ultraviolet mask utilizing coherent extreme-ultraviolet scatterometry microscope at NewSUBARU

Japanese Journal of Applied Physics

Volumn 50, Issue 6 PART 2, 2011, Pages

  Harada, Tetsuo ^a,b   Nakasuji, Masato ^a,b   Tada, Masaki ^a,b   Nagata, Yutaka ^b,c   Watanabe, Takeo ^a,b   Kinoshita, Hiroo ^a,b  

^a UNIVERSITY OF HYOGO   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c RIKEN   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTINIC INSPECTION; AERIAL IMAGES; BEAM LINES; CD UNIFORMITY; CRITICAL DIMENSION; CRITICAL DIMENSION MEASUREMENT; DIFFRACTION IMAGES; DIFFRACTION INTENSITY; EUV MASK; EXTREME ULTRAVIOLET MASKS; EXTREME ULTRAVIOLET SCATTEROMETRY; EXTREME ULTRAVIOLETS; HIGH PRECISION; SCATTEROMETRY; SYNCHROTRON RADIATION FACILITY;

MASKS; SCANNING ELECTRON MICROSCOPY;

DIFFRACTION;

EID: 79959480398     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.50.06GB03     Document Type: Article

References (9)

1. K. Otaki: Jpn. J. Appl. Phys. 39 (2000) 6819.
2. T. Terasawa, T. Yamane, T. Tanaka, T. Iwasaki, O. Suga, and T. Tomie: Jpn. J. Appl. Phys. 48 (2009) 06FA04.
3. E. M. Gullikson, C. Cerjan, D. G. Stearns, P. B. Mirkarimi, and D. W. Sweeney: J. Vac. Sci. Technol. B 20 (2002) 81.
4. K. A. Goldberg, I. Mochi, and P. Naulleau: J. Vac. Sci. Technol. B 27 (2009) 2916.
5. Y. Kamaji, K. Takase, T. Yoshizumi, T. Sugiyama, T. Uno, T. Watanabe, and H. Kinoshita: Jpn. J. Appl. Phys. 48 (2009) 06FA07.
6. Semiconductor Industry Association: International Technology Roadmap for Semiconductors: 2009 Lithography (International SEMATECH, Austin, TX, 2009).
7. T. Harada, J. Kishimoto, T. Watanabe, H. Kinoshita, and D. G. Lee: J. Vac. Sci. Technol. B 27 (2009) 3203.
8. T. Watanabe, T. Haga, M. Niibe, and H. Kinoshita: J. Synchrotron Radiat. 5 (1998) 1149.
9. Chris Mack: Fundamental Principles of Optical Lithography (Wiley, Chichester, U. K., 2008) Chap. 3.8.