EUV pattern defect detection sensitivity based on aerial image linewidth measurements

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 27, Issue 6, 2009, Pages 2916-2921

  Goldberg, K A ^a   Mochi, I ^a   Naulleau, P ^a   Liang, T ^b   Yan, P Y ^b   Huh, S ^c  

^a LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^b INTEL CORPORATION   (United States)

^c SEMATECH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTINIC INSPECTION; AERIAL IMAGES; DEFECT DETECTION SENSITIVITY; EUV IMAGES; IMAGE PROPERTIES; IN-LINE; INTENSITY PROFILES; LINE PATTERN; LINEWIDTH MEASUREMENTS; LINEWIDTH ROUGHNESS; LITHOGRAPHIC PRINTING; MASK INSPECTION; PATTERN DEFECTS; REFLECTED LIGHT; SEMATECH; SENSITIVITY LIMIT;

DEFECTS; INSPECTION; ROUGHNESS MEASUREMENT; ULTRAVIOLET DEVICES;

LINEWIDTH;

EID: 72849152573     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.3264676     Document Type: Conference Paper

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