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Journal of Applied Physics

Volumn 109, Issue 11, 2011, Pages

Effect of doping of 8-hydroxyquinolinatolithium on electron transport in tris(8-hydroxyquinolinato)aluminum

(5) Kumar, Arunandan a,b Srivastava, Ritu a Tyagi, Priyanka a Mehta, D S b Kamalasanan, M N a

a NATIONAL CHEMICAL LABORATORY (India)

b INDIAN INSTITUTE OF TECHNOLOGY DELHI (India)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER HEIGHTS; CONDUCTION MODELS; CURRENT DENSITY-VOLTAGE CHARACTERISTICS; DOPING CONCENTRATION; EFFECT OF DOPING; ELECTRON TRANSPORT; ENERGY DISTRIBUTIONS; FOWLER-NORDHEIM; J-V CHARACTERISTICS; TRANSIENT ELECTROLUMINESCENCE; TRANSPORT MECHANISM; TRAP-CHARGE LIMITEDS;

ALUMINUM; CONCENTRATION (PROCESS); CURRENT DENSITY; ELECTRON MOBILITY; ELECTRON TRANSITIONS; ELECTRON TRANSPORT PROPERTIES; TRANSPORT PROPERTIES;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 79959445763 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3596523 Document Type: Article

Times cited : (23)

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