Low voltage organic light emitting diode using p-i-n structure

Synthetic Metals

Volumn 160, Issue 9-10, 2010, Pages 1126-1129

  Tyagi, Priyanka ^a   Srivastava, Ritu ^a   Kumar, Arunandan ^a   Chauhan, Gayatri ^a   Kumar, Amit ^a   Bawa, S S ^a   Kamalasanan, M N ^a  

^a NATIONAL CHEMICAL LABORATORY   (India)

Author keywords

Energetic disorder; n Type doping; Organic semiconductor; p i n structure

Indexed keywords

CURRENT DENSITY-VOLTAGE CHARACTERISTICS; DOPING CONCENTRATION; ELECTRON TRANSPORT LAYERS; ELECTRON TRANSPORT MATERIALS; EMITTING LAYER; ENERGETIC DISORDER; HOLE TRANSPORT LAYERS; IR(PPY)3; LOW VOLTAGES; N-TYPE DOPING; ORDERS OF MAGNITUDE; ORGANIC SEMICONDUCTOR; P-I-N STRUCTURE; POWER EFFICIENCY; TURN ON VOLTAGE;

ELECTRON TRANSITIONS; ELECTRON TRANSPORT PROPERTIES; IRIDIUM; LIGHT EMISSION; LIGHT EMITTING DIODES; ORGANIC LIGHT EMITTING DIODES (OLED); PHYSICAL OPTICS; SEMICONDUCTOR DIODES; SEMICONDUCTOR DOPING;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 77950959261     PISSN: 03796779     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.synthmet.2010.02.017     Document Type: Letter

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