Structural and multiband photoluminescent properties of a hierarchical ZnO/Si nanoheterostructure

Journal of Materials Research

Volumn 26, Issue 9, 2011, Pages 1174-1178

  Xu, Hai Jun ^a   Su, Lei ^a   Chan, Yu Fei ^a   Sun, Xiao Ming ^a  

^a BEIJING UNIVERSITY OF CHEMICAL TECHNOLOGY   (China)

Author keywords

Nanostructure; Optical properties; Photoemission

Indexed keywords

BAND EDGE TRANSITION; EMISSION MECHANISM; ENERGY-BAND DIAGRAM; FIELD EMISSION SCANNING ELECTRON MICROSCOPY; LIGHTING DEVICES; LUMINESCENCE SPECTROSCOPY; MULTIBAND; NANO DEVICE; NANO-HETEROSTRUCTURES; NANO-POROUS SILICON; OPTOELECTRONIC NANODEVICES; PHOTO-LUMINESCENT PROPERTIES; PHOTOLUMINESCENCE BANDS; PL BANDS; RED EMISSION BAND; SELF-CATALYTIC; SI-BASED; SURFACE STATE; VAPOR-PHASE TRANSPORT METHOD; ZNO; ZNO NANOWIRES;

EMISSION SPECTROSCOPY; FIELD EMISSION MICROSCOPES; HETEROJUNCTIONS; LUMINESCENCE; NANOSTRUCTURED MATERIALS; NANOWIRES; OPTICAL EMISSION SPECTROSCOPY; OXYGEN VACANCIES; SCANNING ELECTRON MICROSCOPY; THERMAL EVAPORATION; X RAY DIFFRACTION; ZINC OXIDE;

OPTICAL PROPERTIES;

EID: 79959384322     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/jmr.2011.71     Document Type: Article

References (23)

1. S. Rohrmoser, J. Baldauf, R.T. Harley, P.G. Lagoudakis, S. Sapra, and A. Eychmuller: Temperature dependence of exciton transfer in hybrid quantum well/nanocrystal heterostructures. Appl. Phys. Lett. 91, 092126 (2007).
2. J. Xiang, W. Lu, Y. Hu, Y. Wu, H. Yan, and C.M. Lieber: Ge/Si nanowire heterostructures as high-performance field-effect transistors. Nature 441, 489 (2006).
3. P. Rauter, T. Fromherz, N.Q. Vinh, B.N. Murdin, G. Mussler, D. Grutzmacher, and G. Bauer: Continuous voltage tunability of intersubband relaxation times in coupled SiGe quantum well structures using ultrafast spectroscopy. Phys. Rev. Lett. 102, 147401 (2009).
4. H. Long, G. Fang, H. Huang, X. Mo, W. Xia, B. Dong, X. Meng, and X. Zhao: Ultraviolet electroluminescence from ZnO/NiO-based heterojunction light-emitting diodes. Appl. Phys. Lett. 95, 013509 (2009).
5. M. Tzolov, B. Chang, A. Yin, D. Straus, J.M. Xu, and G. Brown: Electronic transport in a controllably grown carbon nanotube-silicon heterojunction array. Phys. Rev. Lett. 92, 075505 (2004).
6. 1-xAs as a model system. Phys. Rev. B 81, 235325 (2010).
7. M.C. Jeong, B.Y. Oh, M.H. Ham, S.W. Lee, and J.M. Myoung: ZnO-nanowire-inserted GaN/ZnO heterojunction light-emitting diodes. Small 3, 568 (2007).
8. Y. Tak, J. Hong, J.S. Lee, and K. Yong: Fabrication of ZnO/CdS core/shell nanowire arrays for efficient solar energy conversion. J. Mater. Chem. 19, 5945 (2009).
9. Y. Hsieh, H. Chen, M. Lin, S. Shiu, M. Hofmann, M. Chern, X. Jia, Y. Yang, H. Chang, H. Huang, S. Tseng, L. Chen, K. Chen, C. Lin, C. Liang, and Y. Chen: Electroluminescence from ZnO/Si-nanotips light-emitting diodes. Nano Lett. 9, 1839 (2009).
10. M. Willander, O. Nur, N. Bano, and K. Sultana: Zinc oxide nanorod-based heterostructures on solid and soft substrates for white-light-emitting diode applications. N. J. Phys. 11, 125020 (2009).
11. Y.M. Chang, S.R. Jian, H.Y. Lee, CM. Lin, and J.Y. Juang: Enhanced visible photoluminescence from ultrathin ZnO films grown on Si-nanowires by atomic layer deposition. Nanotechnology 21, 385705 (2010).
12. H.J. Xu and XJ. Li: Silicon nanoporous pillar array: A silicon hierarchical structure with high light absorption and triple-band photoluminescence. Opt. Express 16, 2933 (2008).
13. H.J. Xu and X.J. Li: Preparation, structural and photoluminescent properties of CdS/silicon nanoporous pillar array. J. Phys. Condens. Matter 19, 056003 (2007).
14. H.J. Xu and X.J. Li: Rectification effect and electron transport property of CdS/Si nanoheterostructure based on silicon nanoporous pillar array. Appl. Phys. Lett. 93, 172105 (2008).
15. X. Yan, B.K. Tay, and P. Miele: Field emission from ordered carbon nanotube-ZnO heterojunction arrays. Carbon 46, 753 (2008).
16. Z. Fan, D.J. Ruebusch, A.J. Rathore, R. Kapadia, O. Ergen, P.W. Leu, and A. Javey: Challenges and prospects of nanopillar based solar cells. Nano Res. 2, 829 (2009).
17. C.S. Ku, J.M. Huang, C.Y. Cheng, CM. Lin, and H.Y. Lee: Annealing effect on the optical response and interdiffusion of n-ZnO/p-Si (111) heterojunction grown by atomic layer deposition. Appl. Phys. Lett. 97, 181915 (2010).
18. V.A. Fonoberov, K.A. Alim, A.A. Balandin, F.X. Xiu, and J.L. Liu: Competition between exciton-phonon interaction and defects states in the 3.31 eV band in ZnO. Phys. Rev. B. 73, 165317 (2006).
19. C Li, G.J. Fang, G.H. Su, G.H. Li, X.G. Wu, and X.Z. Zhao: Synthesis and photoluminescence properties of vertically aligned ZnO nanorod-nanowall junction arrays on a ZnO-coated silicon substrate. Nanotechnology 17, 3740 (2006).
20. P.H. Kasai: Electron spin resonance studies of donors and acceptors in ZnO. Phys. Rev. 130, 989 (1963).
21. A.V. Dijken, E.A. Meulenkamp, D. Vanmaekelbergh, and A. Meijerink: The kinetics of the radiative and nonradiative processes in nanocrystalline ZnO particles upon photoexcitation. J. Phys. Chem. B 104, 1715 (2000).
22. Y.L. Liu, Y.C Liu, H. Yang, W.B. Wang, J.G. Ma, J.Y. Zhang, Y.M. Lu, D.Z. Shen, and X.W. Fan: The optical properties of ZnO films grown on porous Si templates. J. Phys. DAppl. Phys. 36, 2705 (2003).
23. R.G. Singh, F. Singh, D. Kanjilal, V. Agarwal, and R.M. Mehra: White light emission from chemically synthesized ZnO-porous silicon nanocomposite. J. Phys. D Appl. Phys. 42, 062002 (2009).