Probing semiconductor band structures and heterojunction interface properties with ballistic carrier emission: GaAs/ Alx Ga 1-x As as a model system

Physical Review B - Condensed Matter and Materials Physics

Volumn 81, Issue 23, 2010, Pages

  Yi, Wei ^a,b   Narayanamurti, Venkatesh ^a   Lu, Hong ^c   Scarpulla, Michael A ^c,d   Gossard, Arthur C ^c  

^a HARVARD UNIVERSITY   (United States)

^b HEWLETT PACKARD LABORATORIES   (United States)

^c University of California   (United States)

^d University of Utah   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 77956304867     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.81.235325     Document Type: Article

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