SCOPUS 정보 검색 플랫폼

Volumn 102, Issue 14, 2009, Pages

Continuous voltage tunability of intersubband relaxation times in coupled SiGe quantum well structures using ultrafast spectroscopy

(7) Rauter, P a Fromherz, T a Vinh, N Q b Murdin, B N c Mussler, G d Grutzmacher D d Bauer, G a

a JOHANNES KEPLER UNIVERSITY LINZ (Austria)

b FOM INSTITUTE FOR PLASMA PHYSICS RIJNHUIZEN (Netherlands)

c UNIVERSITY OF SURREY (United Kingdom)

d FORSCHUNGSZENTRUM JÜLICH (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

APPLIED VOLTAGES; CONTINUOUS VOLTAGES; FREE ELECTRONS; HOLE RELAXATIONS; INTER-SUBBAND; INTERSUBBAND RELAXATIONS; NON-RADIATIVE TRANSITIONS; PICOSECOND TIME; QUANTUM CASCADES; QUANTUM-WELL STRUCTURES; SEMICONDUCTOR HETEROSTRUCTURES; SIGE QUANTUM WELLS; SILICON-BASED; ULTRAFAST SPECTROSCOPIES;

ELECTRIC POTENTIAL; FREE ELECTRON LASERS; LASERS; RELAXATION PROCESSES; SEMICONDUCTING GERMANIUM COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM WELLS; SEMICONDUCTOR QUANTUM WIRES; SILICON ALLOYS; VOLTAGE REGULATORS;

QUANTUM WELL LASERS;

EID: 64549141585 PISSN: 00319007 EISSN: 10797114 Source Type: Journal
DOI: 10.1103/PhysRevLett.102.147401 Document Type: Article

Times cited : (10)

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