Thermomechanical reliability of through-silicon vias in 3D interconnects

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2011, Pages

  Lu, Kuan Hsun ^a   Ryu, Suk Kyu ^a   Im, Jay ^a   Huang, Rui ^a   Ho, Paul S ^a  

^a The University of Texas at Austin   (United States)

Author keywords

3D interconnect; Crack driving force; FEA; Thermo mechanical reliability; TSV

Indexed keywords

3-D INTERCONNECTS; 3D INTERCONNECT; ANALYTICAL SOLUTIONS; CHARGE MOBILITIES; CRACK DRIVING FORCE; HEATING CONDITIONS; INTERFACIAL DELAMINATION; INTERFACIAL FRACTURE; N-CHANNEL; NAIL HEAD; NEAR-SURFACE STRESS; NUMERICAL SOLUTION; PIEZORESISTIVITY; POTENTIAL MECHANISM; STRESS CHARACTERISTICS; THERMOMECHANICAL RELIABILITY; THROUGH SILICON VIAS; TSV; UPPER BOUND; WAFER SURFACE;

CRACKS; ENERGY RELEASE RATE; FINITE ELEMENT METHOD; MOSFET DEVICES; SILICON WAFERS; STEEL SHEET; STRESS CONCENTRATION; SURFACE PROPERTIES; THERMAL STRESS; THERMOELASTICITY; THREE DIMENSIONAL; TWO DIMENSIONAL;

RELIABILITY;

EID: 79959299472     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IRPS.2011.5784487     Document Type: Conference Paper

References (17)

1. International Technology Roadmap for Semiconductors (ITRS), 2009.
2. M.S. Bakir, J.D. Meindl, Integrated interconnect technologies for 3D nanoelectronic systems. Artech House, Norwood, MA, 2009.
3. S. Thompson, Guangyu Sun, Youn Sung Choi, and T. Nishida, "Uniaxial-process-induced strained-Si: extending the CMOS roadmap," Electron Devices, IEEE Transactions on, vol. 53, 2006, pp. 1010-1020
4. A.P. Karmarker, X. Xu, and V. Moroz, Performance and reliability analysis of 3D-integration structures employing through silicon via (TSV), Proc. IEEE 47th Annual International Reliability Physics Symposium, Montreal, 2009, pp. 682-687.
5. C.S. Selvanayagam, J.H. Lau, X. Zhang, S.K.W. Seah, K. Vaidyanathan, and T.C. Chai, Nonlinear thermal stress/strain analyses of copper filled TSV (Through Silicon Via) and their flip-chip microbumps, Electronic Components and Technology Conference, 2008, pp. 1073-1081.
6. N. Ranganathan, K. Prasad, N. Balasubramanian, and K. L. Pey, A study of thermo-mechanical stress and its impact on through-silicon vias, J. Micromech. Microeng. 18, 1-13 (2008).
7. X. Liu, Q. Chen, P. Dixit, R. Chatterjee, R. Tummala, and S. Sitaraman, Failure mechanisms and optimum design for electroplated copper through-silicon vias (TSV), Electronic Components and Technology Conference, 2009, pp. 624-629.
8. K. Lu, X. Zhang, S. Ryu, J. Im, R. Huang, and P. Ho, Thermo-mechanical reliability of 3-D ICs containing through-silicon-vias, Electronic Components and Technology Conference, 2009, pp. 630-634.
9. A. Karmarkar, Xiaopeng Xu, and V. Moroz, "Performanace and reliability analysis of 3D-integration structures employing Through Silicon Via (TSV)," Reliability Physics Symposium, 2009 IEEE International, 2009, pp. 682-687.
10. X. Liu, Q. Chen, P. Dixit, R. Chatterjee, R. Tummala, and S. Sitaraman, Failure mechanisms and optimum design for electroplated copper through-silicon vias (TSV), Electronic Components and Technology Conference, 2009, pp. 624-629.
11. K. Lu, X. Zhang, S. Ryu, R. Huang, and P. Ho, Thermal stresses analysis of 3-D interconnect, 10th International Workshop on Stress-Induced Phenomena in metallization, Proc. American Institute of Physics Conference 1143, 2009, pp. 224-230.
12. A.E.H. Love, The stress produced in a semi-infinite solid by pressure on part of the boundary, Philos. Trans. A 228, 377-420 (1929).
13. T.C. Lu, J. Yang, Z. Suo, A.G. Evans, R. Hecht, and R. Mehrabian, Matrix cracking in intermetallic composites caused by thermal expansion mismatch, ACTA Metall. Mater. 39, 1883-1890 (1991).
14. S. Ryu, K. Lu, X. Zhang, J. Im, P. Ho, and R. Huang, IEEE Trans. TDMR, 2010.DOI:10.1109/TDMR.2010.2068572.
15. Y. Sun, S. Thompson, and T. Nishida, Strain Effect in Semiconductors: Theory and Device Applications, New York: Springer, 2010.
16. W.P. Mason and R.N. Thurston, "Use of Piezoresistive Materials in the Measurement of Displacement, Force, and Torque," The Journal of the Acoustical Society of America, vol. 29, Oct. 1957, pp. 1096-1101.
17. Y. Kanda, "A graphical representation of the piezoresistance coefficients in silicon", IEEE Transactions on, vol. 29, 1982, pp. 64-70.