SiC field effect transistor technology demonstrating prolonged stable operation at 500 °c

Materials Science Forum

Volumn 556-557, Issue , 2007, Pages 831-834

  Neudeck, Philip G ^a   Spry, David J ^a   Chen, Liang Yu ^a   Okojie, Robert S ^a   Beheim, Glenn M ^a   Meredith, Roger ^a   Ferrier, Terry ^a  

^a NASA GLENN RESEARCH CENTER   (United States)

Author keywords

Amplifier; Durability; High temperature; MESFET; Packaging; Reliability

Indexed keywords

AMPLIFIERS (ELECTRONIC); DEGRADATION; DURABILITY; HIGH FREQUENCY AMPLIFIERS; MESFET DEVICES; OVENS; PACKAGING; RELIABILITY; SILICON CARBIDE; TRANSISTORS; VOLTAGE REGULATORS;

COMMON SOURCE AMPLIFIER; HIGH TEMPERATURE; LOW FREQUENCY VOLTAGE; MESFET; SATURATION CURRENT; STABLE OPERATION; TRANSISTOR DEGRADATION; TRANSISTOR OPERATION;

ELECTRIC FIELD EFFECTS;

EID: 38449103926     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.556-557.831     Document Type: Conference Paper

References (4)

1. F. P. McCluskey, et al.: High Temperature Electronics (CRC Press, New York 1997).
2. R. S. Okojie, et al.: Mat. Res. Soc. Symp. Proc. Vol. 622 (2000), p. H7.5.1.
3. D. J. Spry, et al.: Proc. 2004 IMAPS Int. Conf. High Temperature Electronics (2004), p. WA1.
4. L.Y. Chen, et al.: Proc. 2006 IMAPS Int. Conf. High Temperature Electronics (2006), p. 240.