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Journal of Materials Science

Volumn 46, Issue 6, 2011, Pages 1884-1889

Structural, optical, electrical properties and FTIR studies of fluorine doped SnO2 films deposited by spray pyrolysis

(4) Zhang, B a,b Tian, Y b Zhang, J X a,b Cai, W a

a HARBIN INSTITUTE OF TECHNOLOGY (China)

b SHANDONG UNIVERSITY (China)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER SCATTERING; DOPING LEVELS; FLUORINE CONCENTRATIONS; FLUORINE IONS; FLUORINE-DOPED; FT-IR STUDY; FTIR; HIGH DOPING LEVEL; INTERSTITIAL SITES; IONIZED IMPURITIES; NEUTRAL IMPURITY SCATTERING; PREFERRED GROWTH; SCATTERING MECHANISMS; ULTRASONIC SPRAY PYROLYSIS METHOD;

CARRIER CONCENTRATION; ELECTRIC PROPERTIES; FLUORINE; OXYGEN; OXYGEN VACANCIES; SCATTERING; SEMICONDUCTOR DOPING; X RAY DIFFRACTION;

SPRAY PYROLYSIS;

EID: 79958834893 PISSN: 00222461 EISSN: 15734803 Source Type: Journal
DOI: 10.1007/s10853-010-5021-3 Document Type: Article

Times cited : (49)

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