Atmospheric pressure chemical vapor deposition of transparent conducting films of fluorine doped zinc oxide and their application to amorphous silicon solar cells

Journal of Materials Science

Volumn 42, Issue 15, 2007, Pages 6388-6399

  Liang, Haifan ^a,b   Gordon, Roy G ^c  

^a HARVARD UNIVERSITY   (United States)

^b NONE   (United States)

^c HARVARD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONCENTRATION (PROCESS); FLUORINE; LOW PRESSURE CHEMICAL VAPOR DEPOSITION; OPTICAL PROPERTIES; SOLUTIONS; TEMPERATURE DISTRIBUTION; THIN FILMS;

AMORPHOUS SILICON SOLAR CELLS; FLUORINE DOPED ZINC OXIDE; TRANSPARENT CONDUCTING FILMS;

ZINC OXIDE;

EID: 34547240917     PISSN: 00222461     EISSN: 15734803     Source Type: Journal    
DOI: 10.1007/s10853-006-1255-5     Document Type: Article

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