![]() |
Volumn 22, Issue 4, 2009, Pages 395-404
|
Crystallographic and dielectric properties of highly oriented BaTiO 3 films: Influence of oxygen pressure utilized during pulsed laser deposition
|
Author keywords
BaTiO3; Phase transition; Strain; Stress; Thin film
|
Indexed keywords
BATIO3;
BULK TRANSITION TEMPERATURE;
DEPOSITION CONDITIONS;
DIELECTRIC TUNING;
FERROELECTRIC PHASE;
HIGH ELECTRIC FIELDS;
HIGHLY STRAINED;
IN-PLANE;
INFLUENCE OF OXYGEN;
LOW PRESSURES;
MGO SUBSTRATE;
ORIENTED FILMS;
OUT-OF-PLANE LATTICE PARAMETERS;
OXYGEN PRESSURE;
PARAELECTRIC PHASE;
PERMITTIVITY VALUES;
POLARIZATION DIRECTION;
POLYCRYSTALLINITY;
RELAXOR;
ROOM TEMPERATURE;
STRAIN ENGINEERING;
TETRAGONAL DISTORTION;
TUNABILITY;
TUNING CURVE;
WORKING PRESSURES;
BARIUM COMPOUNDS;
CERAMIC CAPACITORS;
CRYSTAL ORIENTATION;
ELECTRIC FIELDS;
EPITAXIAL FILMS;
FERROELECTRIC FILMS;
OSCILLATORS (ELECTRONIC);
OXYGEN;
PERMITTIVITY;
POLARIZATION;
PULSED LASER DEPOSITION;
SINGLE CRYSTALS;
THIN FILM DEVICES;
TUNING;
PHASE TRANSITIONS;
|
EID: 67649124531
PISSN: 13853449
EISSN: 15738663
Source Type: Journal
DOI: 10.1007/s10832-008-9443-0 Document Type: Article |
Times cited : (32)
|
References (34)
|