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Volumn 22, Issue 4, 2009, Pages 395-404

Crystallographic and dielectric properties of highly oriented BaTiO 3 films: Influence of oxygen pressure utilized during pulsed laser deposition

(5) Hiltunen, J a,b Seneviratne, D a Tuller, H L a Lappalainen, J c Lantto, V c

a USA (United States)

b VTT TECHNICAL RESEARCH CENTRE OF FINLAND (Finland)

c UNIVERSITY OF OULU (Finland)

Author keywords

BaTiO3; Phase transition; Strain; Stress; Thin film

Indexed keywords

BATIO3; BULK TRANSITION TEMPERATURE; DEPOSITION CONDITIONS; DIELECTRIC TUNING; FERROELECTRIC PHASE; HIGH ELECTRIC FIELDS; HIGHLY STRAINED; IN-PLANE; INFLUENCE OF OXYGEN; LOW PRESSURES; MGO SUBSTRATE; ORIENTED FILMS; OUT-OF-PLANE LATTICE PARAMETERS; OXYGEN PRESSURE; PARAELECTRIC PHASE; PERMITTIVITY VALUES; POLARIZATION DIRECTION; POLYCRYSTALLINITY; RELAXOR; ROOM TEMPERATURE; STRAIN ENGINEERING; TETRAGONAL DISTORTION; TUNABILITY; TUNING CURVE; WORKING PRESSURES;

BARIUM COMPOUNDS; CERAMIC CAPACITORS; CRYSTAL ORIENTATION; ELECTRIC FIELDS; EPITAXIAL FILMS; FERROELECTRIC FILMS; OSCILLATORS (ELECTRONIC); OXYGEN; PERMITTIVITY; POLARIZATION; PULSED LASER DEPOSITION; SINGLE CRYSTALS; THIN FILM DEVICES; TUNING;

PHASE TRANSITIONS;

EID: 67649124531 PISSN: 13853449 EISSN: 15738663 Source Type: Journal
DOI: 10.1007/s10832-008-9443-0 Document Type: Article

Times cited : (32)

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