Effect of biasing at elevated temperature on the electronic structure of Pt/HfO2/Si stacks

Microelectronic Engineering

Volumn 88, Issue 7, 2011, Pages 1353-1356

  Matveyev, Yu ^a   Zenkevich, A ^a   Lebedinskii, Yu ^a   Thiess, S ^b   Drube, W ^b  

^a NATIONAL RESEARCH NUCLEAR UNIVERSITY MEPHI   (Russian Federation)

^b DESY   (Germany)

Author keywords

Band alignment; BTS; HAXPES; High k dielectric; Oxygen vacancies

Indexed keywords

BAND ALIGNMENTS; BIAS-TEMPERATURE STRESS; BTS; CAPACITANCE VOLTAGE; CHEMICAL CHANGE; CURRENT-VOLTAGE MEASUREMENTS; ELEVATED TEMPERATURE; EX SITU; EXPERIMENTAL DATA; HARD X-RAY PHOTOELECTRON SPECTROSCOPY; HAXPES; HIGH-K DIELECTRIC; HIGH-WORK-FUNCTION METAL; IN-SITU; POSITIVELY CHARGED; ROOM TEMPERATURE;

BIAS VOLTAGE; CHARGE TRANSFER; CHEMICAL ANALYSIS; CHEMICAL MODIFICATION; ELECTRONIC STRUCTURE; HAFNIUM OXIDES; IODINE; ION EXCHANGE; OXYGEN; PHOTOELECTRON SPECTROSCOPY; PLATINUM; SILICON COMPOUNDS; VANADIUM; X RAY PHOTOELECTRON SPECTROSCOPY;

OXYGEN VACANCIES;

EID: 79958055209     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2011.03.104     Document Type: Conference Paper

References (17)

1. J.K. Schaeffer, L. Fonseca, S. Samavedam, D.C. Gilmer, Y. Liang, S. Kalpat, H.H. Tseng, Y. Shiho, A. Demkov, R. Hegde, W. Taylor, D. Triyoso, D. Roan, B. White, and P. Tobin Appl. Phys. Lett. 85 2004 1826
2. E. Cartier, F.R. McFeely, V. Narayanan, P. Jamison, M. Copel, and G. Shahidi Symp. on VLSI Tech. Digest 2005 15
3. A. Kerber, E. Cartier, L. Pantisano, R. Degraeve, T. Kauerauf, Y. Kim, A. Hou, G. Groeseneken, H.E. Maes, and U. Schwalke IEEE Electron Dev. Lett. 24 2003 87 89
4. Krzysztof. Szot, Wolfgang. Speier, Gustav. Bihlmayer, and Rainer. Waser Nature Mater. 5 2006 312
5. L. Goux, P. Czarnecki, Y.Y. Chen, L. Pantisano, X.P. Wang, R. Degraeve, B. Govoreanu, M. Jurczak, D.J. Wouters, and L. Altimime Appl. Phys. Lett. 97 2010 243509
6. E. Cartier, B.P. Linder, V. Narayanan, and V.K. Paruchi Tech. Dig. - Int. Electron Devices Meet. 2006 321
7. S. Walsh, L. Fang, J.K. Schaeffer, E. Weisbrod, and L.J. Brillson Appl. Phys. Lett. 90 2007 052901
8. A. Zenkevich, Y. Lebedinskii, Y. Matveyev, S. Spiga, L. Lamagna, and M. Fanciulli Microelectron. Eng. 86 2009 1777 1779
9. László Kövér J. Electron. Spectrosc. Related Phenom. 178-179 2010 241 257
10. 2/Si samples.
11. E.A. Kraut, R.W. Grant, J.R. Waldrop, and S.P. Kowalczyk Phys. Rev. Lett. 44 1980 1620
12. H.B. Michaelson J. Appl. Phys. 48 1977 4729 4733
13. G.D. Wilk, R.M. Wallace, and J.M. Anthony J. Appl. Phys. 89 2001 5243 5275
14. W. Zheng, K.H. Bowen, Jun Li, I. Daübkowska, and M. Gutowski J. Phys. Chem. A 109 2005 11521 11525
15. J. Robertson, O. Sharia, and A. Demkov Appl. Phys. Lett. 91 2007 132912
16. Eun-Ae Choi, and K.J. Chang Appl. Phys. Lett. 94 2009
17. P. Broqvist, and A. Pasquarello Appl. Phys. Lett. 89 2006 262904