Influence of annealing temperature on the performance of graphene / SiC transistors with high-k / metal gate

2011 12th International Conference on Ultimate Integration on Silicon, ULIS 2011

Volumn , Issue , 2011, Pages 171-174

  Clavel, M ^a   Poiroux, T ^a   Mouis, M ^b   Becerra, L ^a   Thomassin, J L ^a   Zenasni, A ^a   Lapertot, G ^a   Rouchon, D ^a   Lafond, D ^a   Faynot, O ^a  

^a CEA GRENOBLE   (France)

^b IMEP LAHC   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TEMPERATURES; ELECTRICAL CHARACTERISTIC; EPITAXIAL GRAPHENE; GATED DEVICES; METAL GATE; THERMAL-ANNEALING;

ANNEALING; CARRIER MOBILITY; ELECTRIC FIELD EFFECTS; GRAPHENE; SILICON CARBIDE;

FIELD EFFECT TRANSISTORS;

EID: 79958004512     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ULIS.2011.5757955     Document Type: Conference Paper

References (18)

1. K. S. Novoselov, Electric Field Effect in Atomically Thin Carbon Films, Science 306, 666 (2004).
2. A.K. Geim, The Rise of Graphene, Nature Materials 6, 183 (2007).
3. K.I Bolotin, Ultrahigh Electron Mobility in Suspended Graphene, Solid State Communications 146, 351 (2008)
4. S.V. Morozov, Giant Intrinsic Carrier Mobilities in Graphene and Its Bilayer, Physical Review Letters 100, 016602 (2008)
5. M.C Lemme, A Graphene Field-Effect Device, IEEE Electron Device Letter 28, 654 (2007)
6. C. Berger, Ultrathin Epitaxial Graphite: 2D Electron Gas Properties and a Route toward Graphene-based Nanoelectronics, Journal of Physical Chemistry B, 108, 19912 (2004)
7. J. Wintterlin, Graphene on metal surfaces, surface Science 603, 1841 (2009)
8. I. Meric RF Performance of top-gated, zero-band gap graphene field-effect transistors, International Electron Devices Meeting (2008)
9. J.S Moon, Epitaxial-Graphene RF Field-Effect Transistors on Si-Face 6H-SiC Substrates, IEEE Electron Device Letter 30, 650 2009
10. N. Meng, Influence of Temperature on High Frequency Performance of Graphene Nano Ribbon Field Effect Transistor, Device Research Conference (2010)
11. Ph. Avouris, Graphene-based fast electronics and optoelectronics, International Electron Devices Meeting (2010)
12. B.N. Szafranek, Electrical Observations of a tunable band Gap in Bilayer graphene Nanoribbons at room temperature, Applied Physics Letters 96, 112103 (2010)
13. A. Ferrari, Raman Spectrum of Graphene and Graphene Layers, Physical Review Letters 97, 187401 (2006)
14. M.Y Han, Energy Band-Gap Engineering of Graphene Nanoribbons, Physical Review Letters 98, 206805 (2007)
15. W.A De Heer, Epitaxial Graphene electronic structure and transport, Journal of Physics D: Applied Physics 43, 374007 (2010)
16. J.S Moon, Top-Gated Epitaxial Graphene FETs on Si-Face SiC Wafers With a Peak Transconductance of 600 mS/mm, IEEE Electron Device Letters 31, 260 (2010)
17. G. Gu, Field effect in epitaxial graphene on a silicon carbide sustrate, Applied Physics Letters 90, 253507 (2007)
18. Y. Q. Wu, Top-gated graphene field effect transistors formed by decomposition of SiC, Applied Physics Letters 92,092102 (2008)