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Volumn 323, Issue 1, 2011, Pages 180-182
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Effects of nano-pattern size on the property of InAs site-controlled quantum dots
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Author keywords
Molecular beam epitaxy; Nanomaterials; Quantum dots; Semiconducting IIIV materials
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Indexed keywords
GAAS SUBSTRATES;
GROWTH CONDITIONS;
INAS;
NANO PATTERN;
NANOMATERIALS;
NANOPORE SIZE;
NUCLEATION SITES;
PATTERNED SUBSTRATES;
PEAK INTENSITY;
PHOTOCURABLE;
PROCESS PARAMETERS;
QUANTUM DOT;
QUANTUM DOTS;
ROOM-TEMPERATURE PHOTOLUMINESCENCE;
SEMI CONDUCTING III-V MATERIALS;
SQUARE ARRAY;
TWO-DIMENSION;
GALLIUM ALLOYS;
INDIUM ARSENIDE;
MOLECULAR BEAM EPITAXY;
MOLECULAR BEAMS;
NANOIMPRINT LITHOGRAPHY;
SEMICONDUCTING INDIUM;
SEMICONDUCTOR QUANTUM DOTS;
SUBSTRATES;
NANOPORES;
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EID: 79957999155
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jcrysgro.2010.10.119 Document Type: Article |
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Times cited : (7)
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References (9)
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