Structural and optical properties of InAs quantum dots regrown on atomic hydrogen-cleaned GaAs surface

Applied Physics Letters

Volumn 87, Issue 26, 2005, Pages 1-3

  Kim, Jong Su ^a   Kawabe, Mitsuo ^a   Koguchi, Nobuyki ^a   Lee, Dong Yul ^b   Kim, Jin Soo ^c   Bae, In Ho ^d  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^b Samsung Electro Mechanics   (South Korea)

^c Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

^d Yeungnam University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM; HYDROGEN; PHOTOLUMINESCENCE; SEMICONDUCTOR QUANTUM DOTS; THERMAL EFFECTS; WETTING;

ATOMIC HYDROGEN-CLEANED GAAS SURFACES; FRANZ-KELDYSH OSCILLATIONS; PHOTOLUMINESCENCE INTENSITY; PHOTOREFLECTANCE SPECTRA;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 29744436435     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2150582     Document Type: Article

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