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Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

Volumn 28, Issue 3, 2010, Pages

Molecular-beam epitaxy growth of site-controlled InAs/GaAs quantum dots defined by soft photocurable nanoimprint lithography

(3) Cheng, Chien Chia a Meneou, K a Cheng, K Y a

a University of Illinois at Urbana Champaign (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; CRYSTAL GROWTH; GALLIUM ARSENIDE; MOLECULAR BEAMS; NANOIMPRINT LITHOGRAPHY; NANOPORES; OPTICAL WAVEGUIDES; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM DOTS;

DEFECT-FREE; DENSE ARRAYS; GAAS; GAAS SUBSTRATES; GROWTH PARAMETERS; INAS; INAS/GAAS QUANTUM DOTS; INFLUENTIAL FACTORS; OVERPRESSURE; PHOTOCURABLE; PORE DEPTH; QUANTUM DOT; QUANTUM DOTS; ROOM-TEMPERATURE PHOTOLUMINESCENCE; SINGLE QD;

GALLIUM ALLOYS;

EID: 77952968039 PISSN: 21662746 EISSN: 21662754 Source Type: Journal
DOI: 10.1116/1.3414824 Document Type: Conference Paper

Times cited : (7)

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