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Volumn 519, Issue 16, 2011, Pages 5348-5352

The influence of annealing temperature on the structural, electrical and optical properties of ion beam sputtered CuInSe2 thin films

Author keywords

Annealing; Copper indium Selenide; Electrical properties; Ion beam sputtering; Microstructure; Optical Properties; Thin films

Indexed keywords

ABSORPTION COEFFICIENTS; ANNEALING TEMPERATURES; BK7 GLASS; CIS THIN FILMS; COPPER INDIUM SELENIDE; COPPER LAYER; CRYSTALLINE QUALITY; ELECTRICAL AND OPTICAL PROPERTIES; ELECTRICAL PROPERTY; ELEMENTAL COMPOSITIONS; GRAIN SIZE; ION BEAM SPUTTERING DEPOSITION; ION-BEAM SPUTTERING; OPTICAL AND ELECTRICAL PROPERTIES; OPTICAL ENERGY BAND GAP; STOICHIOMETRIC RATIO; VACUUM CHAMBERS; XRD;

EID: 79957985086     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2011.02.036     Document Type: Article
Times cited : (30)

References (34)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.