ITO substrate resistivity effect on the properties of CuInSe2 deposited using two-electrode system

Journal of Materials Science

Volumn 44, Issue 5, 2009, Pages 1241-1244

  Bouraiou, Assia ^a   Aida, M S ^a   Tomasella, E ^b   Attaf, N ^a  

^a Universite Mentouri Constantine   (Algeria)

^b CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON; DIFFRACTION; ELECTRIC PROPERTIES; ELECTRIC RESISTANCE; ELECTRODEPOSITION; ENERGY GAP; INERT GASES; SCANNING ELECTRON MICROSCOPY; SHEET RESISTANCE; SUBSTRATES; X RAY ANALYSIS; X RAY DIFFRACTION ANALYSIS;

ARGON ATMOSPHERES; AS-DEPOSITED FILMS; BAND GAPS; DECREASING FUNCTIONS; DIFFRACTION PEAKS; ELECTRICAL PROPERTIES; ELECTRICAL-RESISTIVITY MEASUREMENTS; ELECTRODEPOSITION TECHNIQUES; FUNDAMENTAL PROPERTIES; GRAIN SIZES; HOMOGENEOUS SURFACES; OPTICAL ABSORPTION TECHNIQUES; OPTICAL BAND-GAP; SCANNING ELECTRONS; SEM; SEM IMAGES; SUBSTRATE RESISTIVITIES; TWO-ELECTRODE SYSTEMS; X-RAY DIFFRACTIONS; XRD SPECTRUM;

COPPER COMPOUNDS;

EID: 60449098309     PISSN: 00222461     EISSN: 15734803     Source Type: Journal    
DOI: 10.1007/s10853-009-3252-y     Document Type: Article

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