Growth and characterization of CuInSe2 thin films prepared by successive ionic layer adsorption and reaction method with different deposition temperatures

Thin Solid Films

Volumn 517, Issue 24, 2009, Pages 6617-6622

  Yang, Jingxia ^a   Jin, Zhengguo ^a   Chai, Yating ^a   Du, Haiyan ^a   Liu, Tongjun ^a   Wang, Tao ^a  

^a BEIJING UNIVERSITY OF POSTS AND TELECOMMUNICATIONS   (China)

Author keywords

CuInSe2; Deposition temperature; Film growth; Successive ionic layer adsorption and reaction (SILAR)

Indexed keywords

BAND GAP ENERGY; CUINSE2; CYCLE TIME; DEPOSITION TEMPERATURES; FAST GROWTH RATE; FILM MORPHOLOGY; IONIC DIFFUSION; SUCCESSIVE IONIC LAYER ADSORPTION AND REACTIONS;

ADSORPTION; COPPER COMPOUNDS; CRYSTAL STRUCTURE; DEPOSITION; FILM PREPARATION; GROWTH KINETICS; MORPHOLOGY; REACTION KINETICS; SURFACE ROUGHNESS;

FILM GROWTH;

EID: 71749086556     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.04.050     Document Type: Article

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