Electrical and thermal conductivity of low temperature CVD graphene: The effect of disorder

Nanotechnology

Volumn 22, Issue 27, 2011, Pages

  Vlassiouk, Ivan ^a   Smirnov, Sergei ^b   Ivanov, Ilia ^a   Fulvio, Pasquale F ^a   Dai, Sheng ^a   Meyer, Harry ^a   Chi, Miaofang ^a   Hensley, Dale ^a   Datskos, Panos ^a   Lavrik, Nickolay V ^a  

^a OAK RIDGE NATIONAL LABORATORY   (United States)

^b NEW MEXICO STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEGREE OF DISORDER; DOMAIN SIZE; ELECTRICAL PROPERTY; ELECTRICAL RESISTIVITY; HIGH THERMAL CONDUCTIVITY; LINEAR CORRELATION; LOW DEPOSITION TEMPERATURE; LOW TEMPERATURE CVD; NI CATALYSTS; RAMAN PEAK RATIO; SILICON PILLAR; STRUCTURAL DISORDERS;

CHEMICAL VAPOR DEPOSITION; ELECTRIC CONDUCTIVITY; GRAPHENE; SILICON COMPOUNDS; SILICON OXIDES;

THERMAL CONDUCTIVITY;

EID: 79957851786     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/22/27/275716     Document Type: Article

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