Improvement on oxygen vacancies effect of high dielectric constant (Ba 0.7Sr0.3)(Ti0.9Zr0.1)O3 thin films using by plasma treatment

Advanced Materials Research

Volumn 239-242, Issue , 2011, Pages 1002-1005

  Chen, Kai Huang ^a   Wu, Chia Lin ^b   Lin, Jian Yang ^b   Cheng, Chien Min ^c  

^a TUNG FANG DESIGN UNIVERSITY   (Taiwan)

^b NATIONAL YUNLIN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

^c SOUTHERN TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

BSTZ; High dielectric constant; Oxygen vacancy; Plasma treatment; Rf sputtering

Indexed keywords

BSTZ; C-V CURVE; CAPACITANCE OF THIN FILMS; CHEMICAL BONDING STATE; CRYSTALLINE STRUCTURE; HIGH DIELECTRIC CONSTANT; HIGH DIELECTRIC CONSTANTS; INFLUENCE OF OXYGEN; LEAKAGE CURRENT DENSITYS; LOW TEMPERATURE TREATMENT; OXYGEN PLASMA TREATMENTS; OXYGEN PLASMAS; PLASMA TREATMENT; RF-SPUTTERING; XPS; XRD MEASUREMENTS;

BARIUM; CHEMICAL BONDS; DEFECT DENSITY; DIELECTRIC MATERIALS; ELECTRIC PROPERTIES; HIGH TEMPERATURE ENGINEERING; INDUCTIVELY COUPLED PLASMA; KURCHATOVIUM; OXYGEN; PASSIVATION; PLASMA APPLICATIONS; THIN FILMS; ZIRCONIUM;

OXYGEN VACANCIES;

EID: 79957789323     PISSN: 10226680     EISSN: None     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/AMR.239-242.1002     Document Type: Conference Paper

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