Fabrication of one-transistor-capacitor structure of nonvolatile TFT ferroelectric RAM devices using Ba(Zr0.1Ti0.9)O 3 gated oxide film

IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control

Volumn 54, Issue 9, 2007, Pages 1726-1730

  Yang, Cheng Fu ^a   Chen, Kai Huang ^a   Chen, Ying Chung ^a   Chang, Ting Chang ^a  

^a NATIONAL UNIVERSITY OF KAOHSIUNG   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

BARIUM COMPOUNDS; CAPACITORS; FERROELECTRIC MATERIALS; OXIDE FILMS; PARAMETER ESTIMATION; PERMITTIVITY; POLARIZATION;

COERCIVE FIELD; DEPOSITION PARAMETERS; FERROELECTRIC RAM DEVICES; OPTIMUM RADIO FREQUENCY;

TRANSISTORS;

BARIUM DERIVATIVE; NANOMATERIAL;

ARTICLE; ARTIFICIAL MEMBRANE; CHEMISTRY; DATA STORAGE DEVICE; ELECTRIC CAPACITANCE; ELECTROCHEMISTRY; EQUIPMENT; EQUIPMENT DESIGN; INSTRUMENTATION; METHODOLOGY; SEMICONDUCTOR; VOLATILIZATION;

BARIUM COMPOUNDS; COMPUTER STORAGE DEVICES; ELECTRIC CAPACITANCE; ELECTROCHEMISTRY; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; MEMBRANES, ARTIFICIAL; NANOSTRUCTURES; TRANSISTORS; VOLATILIZATION;

EID: 34948890913     PISSN: 08853010     EISSN: None     Source Type: Journal    
DOI: 10.1109/TUFFC.2007.457     Document Type: Article

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