Tantalum oxide thin film prepared by reactive sputtering using hydrogen-containing gas for electrochromic switchable mirror

Journal of the Electrochemical Society

Volumn 157, Issue 3, 2010, Pages

  Tajima, Kazuki ^a   Yamada, Yasusei ^a   Bao, Shanhu ^a   Okada, Masahisa ^a   Yoshimura, Kazuki ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AC IMPEDANCE METHOD; ALL-SOLID-STATE; ELECTROCHROMICS; FABRICATED DEVICE; MIXTURE GAS; OPTICAL STATE; OPTICAL SWITCHING; REACTIVE DC MAGNETRON SPUTTERING; SPUTTERING PROCESS; SWITCHABLE MIRRORS; SWITCHING SPEED; SWITCHING TESTS; HYDROGEN CONTAINING GAS; SUITABLE CONDITIONS;

ARGON; ELECTROCHEMICAL PROPERTIES; ELECTROCHROMISM; HYDROGEN; MAGNETRONS; MIRRORS; MIXTURES; OXYGEN; PROTON CONDUCTIVITY; TANTALUM; TANTALUM OXIDES; THIN FILM DEVICES; THIN FILMS; DURABILITY; GASES; MAGNETRON SPUTTERING; OPTICAL PROPERTIES; OXIDE FILMS; REACTIVE SPUTTERING;

FILM PREPARATION;

EID: 76349098727     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3281168     Document Type: Article

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