Effect of oxygen content during sputtering on the electrical properties of bismuth ferrite thin films

Physica Status Solidi - Rapid Research Letters

Volumn 5, Issue 5-6, 2011, Pages 190-192

  Wu, Jiagang ^a,b   Wang, John ^b   Xiao, Dingquan ^a   Zhu, Jianguo ^a  

^a SICHUAN UNIVERSITY   (China)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

Bismuth ferrite; Electrical properties; Ferroelectrics; Leakage mechanism; Thin films

Indexed keywords

BISMUTH FERRITES; EFFECT OF OXYGEN; ELECTRICAL PROPERTY; FERROELECTRIC PROPERTY; FERROELECTRICS; GROWTH WINDOW; LEAKAGE MECHANISM; OXYGEN CONTENT; PHASE PURITY; RADIO FREQUENCY SPUTTERING; REMANENT POLARIZATION; SCHOTTKY EMISSIONS; SINTERING AID;

BISMUTH; ELECTRIC PROPERTIES; FERRITE; FERRITES; FERROELECTRIC FILMS; FERROELECTRIC MATERIALS; FERROELECTRICITY; POLARIZATION; SINTERING; THIN FILMS;

OXYGEN;

EID: 79957709712     PISSN: 18626254     EISSN: 18626270     Source Type: Journal    
DOI: 10.1002/pssr.201105129     Document Type: Article

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