Visualization of photoassisted polarization switching and its consequences in BiFe O3 thin films probed by terahertz radiation

Applied Physics Letters

Volumn 91, Issue 3, 2007, Pages

  Rana, D S ^a   Takahashi, K ^a   Mavani, K R ^a   Kawayama, I ^a   Murakami, H ^a   Tonouchi, M ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BISMUTH COMPOUNDS; ELECTRIC FIELD EFFECTS; ENERGY GAP; FERROELECTRIC MATERIALS; IMAGE ANALYSIS; LIGHT POLARIZATION; SWITCHING;

FERROELECTRIC POLARIZATION; TERAHERTZ RADIATION; TERAHERTZ-EMISSION AMPLITUDE;

THIN FILMS;

EID: 34547199937     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2759259     Document Type: Article

References (12)

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12. The leakage current of 95 and 110 nm thin films (∼ 10-5 - 10-6 A) is almost one to two orders of magnitude larger than that (∼ 10-7 - 10-8 A) for 65 and 85 nm thin films; there is no significant dependence of terahertz-emission amplitude on the relaxed or the strained structural lattice of BFO/LSAT films. [D. S. Rana (unpublished)].