Comparison of methods to bias fully depleted SOI-based MOSFET nanoribbon pH sensors

IEEE Transactions on Electron Devices

Volumn 58, Issue 6, 2011, Pages 1752-1760

  Chapman, Richard A ^a   Fernandes, Poornika G ^a   Seitz, Oliver ^a   Stiegler, Harvey J ^a   Wen, Huang Chun ^b   Chabal, Yves J ^a   Vogel, Eric M ^a  

^a UNIVERSITY OF TEXAS AT DALLAS   (United States)

^b TEXAS INSTRUMENTS   (United States)

Author keywords

Capacitive coupling; floating gate; fully depleted silicon on insulator (SOI); ion sensitive field effect transistor (ISFET); pH sensor

Indexed keywords

CAPACITIVE COUPLINGS; COMPARISON OF METHODS; DIFFUSE LAYERS; FLOATING GATE; FULLY DEPLETED; FULLY DEPLETED SILICON-ON-INSULATOR; GOUY-CHAPMAN MODEL; ION-SENSITIVE FIELD-EFFECT TRANSISTOR (ISFET); LINEAR REGIME; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR; MOS-FET; NANORIBBONS; SILICON CHANNEL; SUBTHRESHOLD;

ELECTRIC FIELDS; ELECTROLYTES; MOSFET DEVICES; PH EFFECTS; SEMICONDUCTING SILICON; SEMICONDUCTOR INSULATOR BOUNDARIES; SENSORS; SILICON ON INSULATOR TECHNOLOGY; TRANSISTORS;

PH SENSORS;

EID: 79957649080     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2011.2132134     Document Type: Article

References (32)

1. P. Bergveld, "Thirty years of ISFETOLOGY. What happened in the past 30 years and what may happen in the next 30 years", Sens. Actuators B, vol. 88, no. 1, pp. 1-20, Jan. 2003. (Pubitemid 35412494)
2. 2-Si System: Physical and theoretical aspects", IEEE Trans. Electron Devices, vol. ED-26, no. 11, pp. 1805-1815, Nov. 1979.
3. M. Waleed Shinwari, M. Jamal Deen, and D. Landheer, "Study of electrolyte-insulator-semiconductor field-effect transistor (EISFET) with applications in biosensor design", Microelectron. Reliab., vol. 47, no. 12, pp. 2025-2057, Dec. 2007. (Pubitemid 350027732)
4. W. Lu, P. Xie, and C. M. Lieber, "Nanowire transistor performance limits and applications", IEEE Trans. Electron Devices, vol. 55, no. 11, pp. 2859-2876, Nov. 2008.
5. E. Stern, A. Vacic, and M. A. Reed, "Semiconducting nanowire fieldeffect transistor biomolecular sensors", IEEE Trans. Electron Devices, vol. 55, no. 11, pp. 3119-3130, Nov. 2008.
6. B. R. Takulapalli, "Molecular sensing using monolayer floating gate, fully depleted SOI MOSFET acting as an exponential transducer", ACS Nano, vol. 4, no. 2, pp. 999-1011, Feb. 2010.
7. S. K. Yoo, S. Yang, and J.-H. Lee, "Hydrogen ion sensing using Schottky contacted silicon nanowire FETs", IEEE Trans. Nanotechnol., vol. 7, no. 6, pp. 745-748, Nov. 2008.
8. S. Birner, C. Uhl, M. Bayer, and P. Vogl, "Theoretical model for the detection of charged proteins with a silicon-on-insulator sensor", J. Phys., Conf. Ser., vol. 107, no. 1, p. 012002, Mar. 2008.
9. X. P. A. Gao, G. Zheng, and C. M. Lieber, "Subthreshold regime has the optimal sensitivity for nanowire FET biosensors", Nano Lett., vol. 10, no. 2, pp. 547-552, Feb. 2010.
10. P. E. Sheehan and L. J. Whitman, "Detection limits for nanoscale biosensors", Nano Lett., vol. 5, no. 4, pp. 803-807, Apr. 2005. (Pubitemid 40609764)
11. D. Landheer, W. R. McKinnon, G. Aers, W. Jiang, and M. J. Deen, "Calculation of the response of field-effect transistors to charged biological molecules", IEEE Sensors J., vol. 7, no. 9, pp. 1233-1242, Sep. 2007.
12. P. R. Nair and M. A. Alam, "Design considerations of silicon nanowire biosensors", IEEE Trans. Electron Devices, vol. 54, no. 12, pp. 3400-3408, Dec. 2007. (Pubitemid 350225946)
13. J. S. Blakemore, "Approximations for Fermi-Dirac integrals, especially the function F1/2 (eta) used to describe electron density in a semiconductor", Solid State Electron., vol. 25, no. 11, pp. 1067-1076, Nov. 1982. (Pubitemid 13460341)
14. R. Rios and N. D. Arora, "Determination of ultra-thin gate oxide thicknesses for CMOS structures using quantum effects", in IEDM Tech. Dig., 1994, pp. 613-616.
15. P. G. Fernandes, O. Seitz, R. A. Chapman, H. J. Stiegler, H.-C. Wen, Y. J. Chabal, and E. M. Vogel, "Effects of fluid media on ultra-thin SOI based pH sensors", in Proc. IEEE Int. Semicond. Device Res. Symp., 2009, pp. 1-2, DOI: 10.1109/ISDRS.2009.5378055.
16. M. Z. Bazant, K. Thornton, and A. Ajdari, "Diffuse-charge dynamics in electrochemical systems", Phys. Rev. E, vol. 70, no. 2, pp. 021506-1-021506-24, Aug. 2004.
17. H. Zhou, M. A. Preston, R. D. Tilton, and L. R. White, "Calculation of the dynamic impedance of the double layer on a planar electrode by the theory of electrokinetics", J. Colloid Interface Sci., vol. 292, no. 1, pp. 277-289, Dec. 2005. (Pubitemid 41531196)
18. S. Zhang, C. Moskalenko, L. Berguiga, J. Elezgaray, and F. Argoul, "Gouy diffuse layer modeling in phosphate buffers", J. Electroanal. Chem., vol. 603, no. 1, pp. 107-112, May 2007. (Pubitemid 46509782)
19. D. R. Kim, C. H. Lee, and X. Zheng, "Probing flow velocity with silicon nanowire sensors", Nano Lett., vol. 9, no. 5, pp. 1984-1988, May 2009.
20. C. D. Fung, P. W. Cheung, and W. H. Ko, "A generalized theory of an electrolyte-insulator-semiconductor field-effect transistor", IEEE Trans. Electron Devices, vol. ED-33, no. 1, pp. 8-18, Jan. 1986.
21. Y. Tsividis, Operation and Modeling of the MOS Transistor, 2nd ed. London, U. K.: Oxford Univ. Press, 2008, p. 596.
22. D. Landheer, G. Aers, W. R. McKinnon, M. J. Deen, and J. C. Ranuarez, "Model for the field effect from layers of biological macromolecules on the gates of metal-oxide-semiconductor transistors", J. Appl. Phys., vol. 98, no. 4, pp. 044701-1-044701-15, Aug. 2005.
23. W. R. McKinnon, D. Landheer, and G. Aers, "Sensitivity of field-effect biosensors to charge, pH, and ion concentration in a membrane model", J. Appl. Phys., vol. 104, no. 12, pp. 124701-1-124701-11, Dec. 2008.
24. +-sensitive FETs with SPICE", IEEE Trans. Electron Devices, vol. 39, no. 4, pp. 813-819, Apr. 1992.
25. S. A. Scott, W. Peng, A. M. Kiefer, H. Jiang, I. Knezevic, D. E. Savage, M. A. Eriksson, and M. G. Lagally, "Influence of surface chemical modification on charge transport properties in ultrathin silicon membranes", ACS Nano, vol. 3, no. 7, pp. 1683-1692, Jul. 2009.
26. 2-Si structures on pH", IEEE Trans. Electron Devices, vol. ED-29, no. 1, pp. 102-108, Jan. 1982.
27. B. Yu, H.-J. Wann, F. Assaderghi, M. Chan, R.-W. Chen, P. Ko, and C. Hu, "Interface characterization of fully-depleted SOI MOSFET by a subthreshold I-V method", in Proc. IEEE Int. SOI Conf., Oct. 1994, pp. 63-64.
28. Z. Lun, D. S. Ang, and C. H. Ling, "A novel subthreshold slope technique for the extraction of the buried-oxide interface trap density in the fully depleted SOI MOSFET", IEEE Electron Device Lett., vol. 21, no. 8, pp. 411-413, Aug. 2000.
29. B. K. Wunderlich, P. A. Neff, and A. R. Bausch, "Mechanism and sensitivity of the intrinsic detection of biomolecular interactions by field effect devices", Appl. Phys. Lett., vol. 91, no. 8, pp. 083904-1-083904-3, Aug. 2007.
30. M. G. Nikolaides, S. Rauschenbach, and A. R. Bausch, " Characterization of a silicon-on-insulator based thin film resistor in electrolyte solutions for sensor applications", J. Appl. Phys., vol. 95, no. 7, pp. 3811-3815, Apr. 2004.
31. P. G. Fernandes, O. Seitz, R. A. Chapman, H. J. Stiegler, H.-C. Wen, Y. J. Chabal, and E. M. Vogel, "Effect of mobile ions on ultra-thin SOI-based sensors", Appl. Phys. Lett., vol. 97, no. 3, pp. 034103-1-034103-3, Jul. 2010.
32. P. G. Fernandes, O. Seitz, R. A. Chapman, H. J. Stiegler, H.-C. Wen, Y. J. Chabal, and E. M. Vogel, "Effect of back-gate biasing on floating electrolytes in ultra-thin SOI-based nanoribbon sensors", submitted for publication.