Effect of mobile ions on ultrathin silicon-on-insulator-based sensors

Applied Physics Letters

Volumn 97, Issue 3, 2010, Pages

  Fernandes, P G ^a   Seitz, O ^a   Chapman, R A ^a   Stiegler, H J ^a   Wen, H C ^b   Chabal, Y J ^a   Vogel, E M ^a  

^a The University of Texas at Dallas   (United States)

^b TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BIOLOGICAL SOLUTIONS; BUFFER SOLUTIONS; ION DIFFUSION; METAL OXIDE SEMICONDUCTOR; MOBILE CHARGE; MOBILE IONS; SENSOR TECHNOLOGIES; SILICON DIOXIDE; SILICON ON INSULATOR; ULTRATHIN SILICON;

FIELD EFFECT TRANSISTORS; HYSTERESIS; LEAD OXIDE; SELF ASSEMBLED MONOLAYERS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICES; SENSORS; SILICA;

IONS;

EID: 77956209621     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3463453     Document Type: Article

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