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Volumn 50, Issue 5 PART 1, 2011, Pages
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High temperature-coefficient of resistance at room temperature in W-doped VO2 thin films on Al2O3 substrate and their thickness dependence
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Author keywords
[No Author keywords available]
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Indexed keywords
DOPING LEVELS;
ROOM TEMPERATURE;
SENSING PERFORMANCE;
SINGLE CRYSTAL SUBSTRATES;
TEMPERATURE COEFFICIENT OF RESISTANCE;
THICKNESS DEPENDENCE;
W-DOPING;
SINGLE CRYSTALS;
SUBSTRATES;
THIN FILMS;
SEMICONDUCTOR DOPING;
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EID: 79957622335
PISSN: 00214922
EISSN: 13474065
Source Type: Journal
DOI: 10.1143/JJAP.50.055804 Document Type: Article |
Times cited : (37)
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References (23)
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