Effect of W doping in metal-insulator transition material VO2 by tunnelling spectroscopy

Journal of Physics Condensed Matter

Volumn 19, Issue 9, 2007, Pages

  Kim, C ^a   Shin, J S ^b   Ozaki, H ^a  

^a WASEDA UNIVERSITY   (Japan)

^b Daejeon University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; ELECTRON TUNNELING; ENERGY GAP; FERMI LEVEL; METAL INSULATOR TRANSITION; SPECTROSCOPIC ANALYSIS; TUNGSTEN;

PSEUDO-ENERGY-GAP STRUCTURE; TUNNELLING SPECTROSCOPY;

VANADIUM COMPOUNDS;

EID: 33947599076     PISSN: 09538984     EISSN: 1361648X     Source Type: Journal    
DOI: 10.1088/0953-8984/19/9/096007     Document Type: Article

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