Properties of VO2 thin film prepared with precursor VO(acac)2

Journal of Crystal Growth

Volumn 265, Issue 1-2, 2004, Pages 121-126

  Pan, Mei ^a   Zhong, Hongmei ^a   Wang, Shaowei ^a   Liu, Jie ^a   Li, Zhifeng ^a   Chen, Xiaoshuang ^a   Lu, Wei ^a  

^a SHANGHAI INSTITUTE OF TECHNICAL PHYSICS   (China)

Author keywords

A1. Temperature coefficient of resistivity; Al. Sol gel; B1. Vanadium dioxide thin film

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL GROWTH; CRYSTAL IMPURITIES; HEAT RESISTANCE; PHASE TRANSITIONS; SEMICONDUCTOR DOPING; SOL-GELS; SPUTTERING; SUBSTRATES; THIN FILMS;

TEMPERATURE COEFFICIENT OF RESISTIVITY; VANADIUM DIOXIDE THIN FILMS;

VANADIUM COMPOUNDS;

EID: 1842579952     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2003.12.065     Document Type: Article

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