Changes in lattice parameters of VO2 films grown on c-Plane Al2O3 substrates across metal-insulator transition

Japanese Journal of Applied Physics

Volumn 48, Issue 4, 2009, Pages

  Okimura, Kunio ^a   Sakai, Joe ^b  

^a TOKAI UNIVERSITY   (Japan)

^b UNIVERSITÉ DE TOURS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

HIGH TEMPERATURE; IN-PLANE; LATTICE LENGTH; LATTICE PARAMETERS; LOW TEMPERATURES; MONOCLINIC PHASE; TETRAGONAL PHASE; TETRAGONAL PHASIS; TRANSITION PROPERTIES; TRANSITION TEMPERATURE; VANADIUM DIOXIDE; X-RAY DIFFRACTION MEASUREMENTS;

LATTICE CONSTANTS; METAL INSULATOR BOUNDARIES; PULSED LASER DEPOSITION; SEMICONDUCTOR INSULATOR BOUNDARIES; VANADIUM; VANADIUM COMPOUNDS;

METAL INSULATOR TRANSITION;

EID: 67849088610     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.48.045504     Document Type: Article

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