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Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2009, Pages

Simulation study of switching mechanism in carbon-based resistive memory with molecular dynamics and Extended Hückel Theory-based NEGF method

(7) Guan, Ximeng a He, Yu b Zhao, Liang b Zhang, Jinyu b Wang, Yan b Qian, He b Yu, Zhiping b

a TSINGHUA UNIVERSITY (China)

b NONE

Author keywords

[No Author keywords available]

Indexed keywords

ATOMISTIC LEVELS; CARBON-BASED; KEY PARAMETERS; MEMORY CELL; MOLECULAR DYNAMICS METHODS; NON-EQUILIBRIUM GREEN'S FUNCTION; RE-GROWTH; SIMULATION STUDIES; SWITCHING MECHANISM; SWITCHING PROCESS; SWITCHING SPEED;

ELECTRON DEVICES; GREEN'S FUNCTION; MOLECULAR DYNAMICS; SEMICONDUCTOR STORAGE;

SWITCHING;

EID: 77952331612 PISSN: 01631918 EISSN: None Source Type: Conference Proceeding
DOI: 10.1109/IEDM.2009.5424278 Document Type: Conference Paper

Times cited : (5)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.