Epitaxial growth of uniform NiSi 2 layers with atomically flat silicide/Si interface by solid-phase reaction in Ni-P/Si(1 0 0) systems

Applied Surface Science

Volumn 257, Issue 17, 2011, Pages 7422-7426

  Hsu, H F ^a   Chan, H Y ^a   Chen, T H ^a   Wu, H Y ^a   Cheng, S L ^b   Wu, F B ^c  

^a NATIONAL CHUNG HSING UNIVERSITY   (Taiwan)

^b NATIONAL CENTRAL UNIVERSITY   (Taiwan)

^c NATIONAL UNITED UNIVERSITY   (Taiwan)

Author keywords

Interface; Nickel silicide; Phosphorous

Indexed keywords

ANNEALING; ELECTRIC FIELD EFFECTS; ELECTRON BEAM LITHOGRAPHY; INTERFACES (MATERIALS); MOS DEVICES; MOSFET DEVICES; NICKEL; OXIDE SEMICONDUCTORS; SILICIDES; SILICON; TEMPERATURE;

ANNEALING PROCESS; ATOMICALLY FLAT INTERFACES; ELECTRICAL CONTACTS; LOW TEMPERATURES; NICKEL SILICIDE; PHOSPHOROUS; SOLID PHASE REACTION; SOURCE/DRAIN REGIONS;

NICKEL COMPOUNDS;

EID: 79957500268     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2011.02.108     Document Type: Article

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